Fig. 4: Magnetoresistive scaling.
From: Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability
a Magnetic flux measured from an alternating current applied to the four γ-Al2O3/SrTiO3 heterostructures with varying carrier densities. The magnetic flux is measured with a scanning superconducting quantum interference device with a pick-up loop of 1.8 µm. The scale bar is 20 µm in all cases. b Comparison of the zero-field mobility (µ0) and (c) magnetoresistance at 15 T as a function of the sheet carrier density for a variety of γ-Al2O3/SrTiO3 samples where the oxygen growth pressure and post-treatment are varied. The figure compiles mobility data also presented in ref. 48 with present data, but all samples were grown in the same pulsed laser deposition chamber by the same person. d, e Magnetoresistance at magnetic fields ranging from 1–15 T displayed as a function of the zero-field mobility and scaled as µ0B. Figures (d, e) were adapted with permission from ref. 31, respectively.
