Fig. 2: Characterization of the final-state ACZTSSe absorbers. | Nature Communications

Fig. 2: Characterization of the final-state ACZTSSe absorbers.

From: Pd(II)/Pd(IV) redox shuttle to suppress vacancy defects at grain boundaries for efficient kesterite solar cells

Fig. 2

a–h Cross-sectional STEM-EDX mappings of Se and Sn elements in the films (a, b Se, control film, c, d Sn, control film, e, f Se, ACZTSSe-Pd film, g, h Sn, ACZTSSe-Pd film). i, j KPFM mapping images of the two absorber films (i Control, j ACZTSSe-Pd) and (k, l) schematic diagram of the energy band bending near the GB regions (k Control, l ACZTSSe-Pd). “e−” represents electron and “h+” represents hole. m Steady-state PL spectra of the absorber films. n–o Modulated transient photocurrent and photovoltage dynamics of the cells.

Back to article page