Fig. 3: TM migration phenomenon in LLRO. | Nature Communications

Fig. 3: TM migration phenomenon in LLRO.

From: Highly reversible transition metal migration in superstructure-free Li-rich oxide boosting voltage stability and redox symmetry

Fig. 3

a HADDF-STEM image of the superstructure-free LLRO at the 4.7 V charged state and b 2.2 V discharged state along the [1\(\bar{1}\)0] zone axis. The graphs on the right and top are the HAADF signal profiles of LLRO. The arrows in the signal profiles indicate the variation of TM and vacancy. c Structure diagram of TM layer for O2-LLRO. d Two migration paths of Ru in O2-LLRO (O: octahedron site, T: tetrahedron site). e, f Two different structures at the half-charged state. The calculated relative site energy along the migration path for Ru1 and Ru2 in g structure 1 and h structure 2. i HADDF-STEM image of LLRO at the 4.7 V recharged state. Source data are provided as a Source Data file.

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