Fig. 1: Diode-integrated silicon G centers.

a Carbon-related silicon color centers are integrated into lateral p⁺-p-n⁺ junctions (diodes) fabricated in silicon on insulator and electrically driven by a wire-bonded 16-pin helium cryostat connector. b The color centers are optically excited by a 532 nm laser and fluoresce at 1278 nm in the telecommunication O-Band. c Side profile of fabricated diodes. P- and n-doping is achieved via ion implantation, and hydrogen is locally incorporated to selectively form G centers at the junction center. d Current-voltage (IV) curves of packaged diodes with integrated G center ensemble, measured as cryostat cools to base operating temperature of approximately 6 K. Inset shows low reverse bias leakage current, passing −0.5μA at -200 V.