Fig. 3: Reverse-bias electrical manipulation.
From: Electrical manipulation of telecom color centers in silicon
a Optical response of G center ZPL under application of a DC electric field reverse biased from 0 to -210 V. Intensity continually decreases with increased reverse bias while the center wavelength redshifts by approximately 100 GHz. b Analysis of ZPL modulation ratio as a function of reverse bias, yielding 100% modulation at -210 V. Normalized to ZPL intensity at zero bias. c Preservation of silicon free-exciton under reverse bias. Unlike the G center, the exciton intensity, center wavelength, and linewidth are not correlated to increased reverse bias, indicating thermal effects are not a significant source of the observed G center behavior.
