Fig. 4: Spatial distribution of emitter-field interaction.
From: Electrical manipulation of telecom color centers in silicon
Confocal maps of diode under reverse bias, depicting ensemble photoluminescence (top row) and measured junction photocurrent (bottom row) at (a) 0 V, b -100 V, and c -200 V. The junction depletion region distribution is illustrated via the ZPL optical intensity modulation spreading across the ensemble beginning from the region closest to the n-type contact, with strong agreement found by correlating the optical response with injected photocurrent measured in the junction. PL color bar noise floor is set to 0.2 due to 1 s integration. Modulation ratio is obtained from normalizing to mean ZPL intensity at zero bias from (a) top.
