Fig. 1: The field-free perpendicular exchange bias switching process. | Nature Communications

Fig. 1: The field-free perpendicular exchange bias switching process.

From: Full electrical manipulation of perpendicular exchange bias in ultrathin antiferromagnetic film with epitaxial strain

Fig. 1

a Schematic structure of the epitaxial Pt/Co/IrMn3 multilayer. b HAADF image of the multilayer. c–f EDS mappings of Pt, Co, Mn, and Ir corresponding to the region in (b). g The M-H loop and the AHE loop of the Pt/Co/IrMn3 structure with the exchange bias effect. Inset: schematic structure of the patterned Hall bar for electrical transport measurements. h The current-induced magnetization switching with the Hext set as −3000 Oe, 0 Oe, and +3000 Oe, respectively. i The operation sequence of the field-free PEBS process. Inset: four different states for the interfacial magnetic moments of the Co and IrMn3 layers. j The switching process of the perpendicular exchange bias.

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