Fig. 7: Enhanced lasing ability of halide perovskite/2D semiconductor heterostructures. | Nature Communications

Fig. 7: Enhanced lasing ability of halide perovskite/2D semiconductor heterostructures.

From: Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing

Fig. 7

a, b 3D AFM and SEM images of CsPbI2Br perovskite epitaxially grown on monolayer WSe2 with 183 nm thickness, showing smooth surface and sharp edges for the high-quality optical resonator. The red dotted arrow indicates the light propagation inside the square whispering gallery mode (WGM) microcavity. c, d PL emission images below and above the lasing threshold for CsPbI2Br/WSe2 heterostructure, respectively. Scale bars, 10 μm. The pump fluence-dependent PL spectra and intensity/FWHM plots of CsPbI2Br (e, h) and CsPbI2Br/WSe2 (f, i) and CsPbI2Br/WS2 (g, j). The purple dashed lines represent the fits to the experimental data, showing the threshold region. Due to the limited space, the a.u. represents the arb. units. k Color-tunable lasing spectra and their images of epitaxial perovskite CsPbX3 on monolayer WSe2 with different halide ion species. Spectra from left to right show the green and red lasing output, corresponding to CsPbBr3, CsPbI2Br, and CsPbI3 gain mediums. Insets display the corresponding lasing emission images above the threshold. Scale bars, 5 μm. l Photo-stability of lasing action assessed by monitoring the lasing intensity and lasing wavelength as a function of laser irradiation time at 1 kHz repetition rate in the ambient environment. The error bars are recorded by standard deviation. Insets are respective lasing intensity spectra before and after 30 min photo-irradiation.

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