Fig. 1: Composition, electrical and magnetic properties of a Mn-Ir/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 (PMN-PT) heterostructure. | Nature Communications

Fig. 1: Composition, electrical and magnetic properties of a Mn-Ir/0.7PbMg1/3Nb2/3O3-0.3PbTiO3 (PMN-PT) heterostructure.

From: An antiferromagnetic spin phase change memory

Fig. 1

a Illustration of the different intermetallic phases for the antiferromagnetic (AFM) Mn-Ir binary system versus the Ir atomic concentration. b Rutherford backscattering and fitting curves of the Mn-Ir/PMN-PT heterostructure c Sketch of the electric-filed (EG)-gating measurement geometry for the Mn-Ir/PMN-PT heterostructure. d EG-dependent resistance curves of the Mn-Ir thin film on the PMN-PT substrate at room temperature. e EG-dependent gate current (IG) of the PMN–PT substrate at room temperature. f Room-temperature out-of-plane magnetization curves of the Mn-Ir thin film after electric field pulse excitations of EG = − 4 and +1.5 kV·cm−1, respectively.

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