Fig. 3: Manipulation of the Hall resistance at room temperature and possible spin phase change mechanism by electric fields for the Mn-Ir/PMN-PT film. | Nature Communications

Fig. 3: Manipulation of the Hall resistance at room temperature and possible spin phase change mechanism by electric fields for the Mn-Ir/PMN-PT film.

From: An antiferromagnetic spin phase change memory

Fig. 3

a Room-temperature Hall effect of the Mn-Ir thin film under the HRS/LRS attained by pulses of EG = −4 and +1.5 kV·cm−1, respectively. b Diagrammatic sketch of the collinear antiferromagnetic spin structure of the L10-type phase in the Mn-Ir thin film under the LRS triggered by an electric pulse of EG = +1.5 kV·cm−1. c Diagrammatic sketch of the noncollinear antiferromagnetic spin structure of the L12-type phase in the Mn-Ir thin film under the HRS triggered by an electric pulse of EG = −4 kV·cm−1.

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