Fig. 1: Crystal structure and electrical transport properties of the VS₂-VS heterodimensional superlattice device N1.

a Crystal structure of the VS₂-VS heterodimensional superlattice with VS₂ layers connected by the interlayer 1D VS chain along the y-axis. b Sketch of the vertical cross-section of the device N1 with the thickness of each layer, a layer of polymethyl methacrylate (PMMA) (\(\sim 500{{\mbox{nm}}}\)) is on the sample surface. c Temperature-dependent resistance for the VS₂-VS superlattice device N1 with its optical image shown in the inset. The current is applied along the y-axis. d Hall resistance under magnetic field along different directions at \(T=2{{\mbox{K}}}\). Source data are provided as a Source Data file.