Fig. 1: Nucleation and growth of CsPbI3 QDs with different ligands.
From: Stable and efficient CsPbI3 quantum-dot light-emitting diodes with strong quantum confinement
a Schematic diagram of 2-naphthalenesulfonic acid (NSA) ligand passivating CsPbI3 QDs and inhibiting Ostwald ripening. b In-situ photoluminescence (PL) spectra of CsPbI3 QDs with or without NSA treatment. c Wavelength evolution extracted from in-situ PL spectra of CsPbI3 QDs with or without NSA treatment. d Absorption and PL spectra of CsPbI3 QDs synthesized with different amounts of NSA (0.0,0.2,0.4,0.6,0.8 mmol (M)). e The TEM images (scale bar 50 nm) of CsPbI3 QDs synthesized with different NSA amounts and the corresponding size statistical distribution maps. f Photoluminescence Quantum Yield (PLQY) of CsPbI3 QDs synthesized with different NSA amounts. Inset: Photos of CsPbI3 QDs synthesized with different NSA amounts under ultraviolet light (365 nm).
