Fig. 3: Single-photon emission on a foundry chip.
From: Tunable quantum emitters on large-scale foundry silicon photonics
a Emission spectra of emitter 1 (E1) under (i) above-band, (ii) quasi-resonant, and (iii) resonant excitation. All spectra are horizontally shifted by the emission frequency of the emitter, ν0. b Autocorrelation measurement, g(2)(τ), under (i) triggered and (ii) continuous-wave excitation. Error bars correspond to the Poisson noise, \(\sqrt{N}\), attributed to the detected counts, N. We provide fits of g(2)(τ) that both incorporate and ignore detector jitter, σjitter. c Saturation curve of the emitter under pulsed above-band excitation indicating a saturation power Psat = 0.48 ± 0.03 μW. d Radiative decay time trace of the emitter under pulsed above-band excitation indicating an emitter lifetime of τ = 1.26 ± 0.03 ns and a non-radiative lifetime of \(\tilde{\tau }=10\pm 1\) ns.
