Fig. 3: Statistical analysis of twisted domain size according to sample thickness and preparation method.

a SAED from an exfoliated crystal of 180 nm thickness. b Dark-field (DF) image showing twisted domain distributions from exfoliated 180-nm-thick crystal. c Zoomed-in HAADF STEM image from the red box in (b) near a rotational domain boundary. The faint green and purple colors indicate the positions of Cr in each domain, and the yellow lines represent the stacking fault areas. d Comparison of domain distribution according to DF imaging (red circles) and HAADF-STEM measurements (blue squares). e SAED from an exfoliated crystal of 430 nm thickness. f DF image showing twisted domain distributions from the exfoliated 430-nm-thick crystal. g DF image from an unexfoliated, as-grown crystal. h Cumulative volume ratio by counting from smaller domain regions. i Relative twisted domain population from different sample preparation processes. For exfoliated samples with a thickness below 200 nm, the bar graph represents the average value, while the black circles indicate individual values from three samples. j Distribution of domain thickness from crystals with different sample preparation processes.