Fig. 2: Adsorbate-induced variation of the Schottky-junction barrier. | Nature Communications

Fig. 2: Adsorbate-induced variation of the Schottky-junction barrier.

From: Molecularly specific detection towards trace nitrogen dioxide by utilizing Schottky-junction-based Gas Sensor

Fig. 2

a The photograph of the Bi2O2Se gas sensor obtained by utilizing optical microscopy (scale bar: 12 µm). b AFM image showing topology of the Bi2O2Se-Au contact (scale bar: 3 µm). c The KPFM pattern of Bi2O2Se-Au contact (scale bar: 3 µm). d The energy band profile of the forward-biased contact in vacuum (vac.) (\({\varphi }_{{{{{{\rm{Au}}}}}}}\): work function of Au; EF: Fermi level of Bi2O2Se; Ec: conduction band minimum; Ev: valence band maximum). e, f The temperature-dependent I-V plot of the device in vacuum and its linear fitting (f, ln(I/T 2) and T −1). g The energy band profile of the forward-biased contact in NO2 (700 ppt). h The I-V relation as the function of temperature in NO2 (700 ppt). i The linear fitting between ln(I/T 2) and T −1 for I-V curve in (h). The temperature-dependent resistance (j) and mobility (k) in Ar environment. l The linear fitting for extraction of ionization energy (the measurement conducted in vacuum).

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