Fig. 3: Avalanche properties and operation mechanism.
From: Adaptative machine vision with microsecond-level accurate perception beyond human retina
a Output characteristics at different gate voltage (VGS) in the logarithmic scale of the y-axis. b The electrical breakdown voltage (VEB) and Mutiplication factor as a function of VGS. c VEB and Multiplication factor of our device and previously reported 2D devices. d Sn/I as a function of frequency for different bias voltages at VGS = −3 V. Sn and I are the noise spectral density and the corresponding current, respectively. e Logarithmic plot of 1 - 1/M versus VDS in avalanche multiplication at different VGS. f Ionization rate mapping at different bias and gate voltage. g, h Technology computer-aided design (TCAD) simulated the evolution of the channel electric field (top panel) and ionization rate (bottom panel) by varying (g) VDS and (h) VGS.
