Fig. 2: In-situ growth of oriented Mo6Te6 NW bundles in 2H-MoTe2 confined by graphite electrodes under electrical biasing.
From: Constrained patterning of orientated metal chalcogenide nanowires and their growth mechanism
a Schematic depiction of the graphite-MoTe2-graphite heterostructure device on the in-situ microelectromechanical system (MEMS) chip. The graphite layers on the top and bottom are connected to the positive and negative electrodes of the chip, respectively. The current flow is highlighted by black dashed arrows, and the electrodes on the MEMS chip is highlighted by yellow. b–d A series of high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) images showing the dynamic growth of the oriented NW bundles. White arrow indicates surface undulations as reference marker during structure conversion. e The evolution of resistance as a function of time measured through the chip during the in-situ experiment with the schematic indicating the phase transition inserted. A rapid drop in resistance and the growth of NWs were observed simultaneously when the voltage reached 2.5 V. f, g Cross-sectional HAADF images of the 2H-MoTe2 (f) and the as-grown Mo6Te6 NW bundle (g). h, i Zoom-in atomic images showing the clean interface of 2H-MoTe2/graphite (h) and Mo6Te6/graphite (i) with the atomic models overlaid. Source data are provided as a Source Data file.
