Fig. 1: Sequential epitaxial growth of the in-plane MoSe2 QDs@WSe2.
From: Confinement of excited states in two-dimensional, in-plane, quantum heterostructures
a Schematic representation of sequential epitaxial growth of in-plane QDs heterostructures via MOCVD. b Low magnification ADF-STEM image of the heterostructures consisting of the 5 min-MoSe2 QDs and the WSe2 matrix. The MoSe2 QDs are marked with the red arrows. c Atomic-resolution ADF-STEM image showing an interface between the MoSe2 QDs and the WSe2 matrix (bottom left and top right, respectively). d ADF-STEM image of the heterostructures with the 5 min-MoSe2 QDs. e–g Corresponding STEM-EDS element maps of Mo (e), W (f), and Se atoms (g) for the Figure (d). The boundaries between the MoSe2 QD and the WSe2 matrix are marked with a white dot line from Figure (d).
