Fig. 4: Reversibility of Zn plating/stripping under extreme conditions.
From: Stable zinc anode solid electrolyte interphase via inner Helmholtz plane engineering
Galvanostatic Zn plating/ stripping in a Zn | |Zn symmetric cell at (a) 5 mA cm−2 and 2 mAh cm−2 and (b) 30 mA cm−2 and 10 mAh cm−2. c The comparison of “life factor” between this work and previous reported works5,13,14,30,34,35,36,37,38,39,40. d Zn plating/ stripping coulombic efficiency (CE) at 15 mA cm−2 and 14 mAh cm−2 with 47.8% ZUR (50 µm Zn foil) in different electrolytes. e Zn plating/ stripping CE at a low rate of 5 mA cm−2 and 14 mAh cm−2 in Zn | |Cu asymmetric cells. f Schematic and digital photo of Zn | |Zn symmetric pouch cell. g Long cycling performance of corresponding Zn | |Zn pouch cells in different electrolytes at 20 mA cm−2 and 10 mAh cm−2 with the ZUR of 34.2%.
