Fig. 3: Optoelectronic properties and working mechanism of ReS₂/GeSe₂ heterostructures OCPM.

a I-t curve demonstrating non-volatile PPC (V_gs = −10 V). The illumination intensity of 808 nm wavelength was fixed as 19 mW/cm². This power was used for all the rest of PPC operations without special instructions. b I-t curve demonstrating non-volatile NPC (V_gs = −10 V). The intensity illumination with 405 nm wavelength was fixed as 19 mW/cm². This power was used for all the rest of NPC operations without special instructions. c Fully optical-controlled potentiation/depression with polarimetric functions (Light pulse width 10 ms, V_gs = −10V, V_ds = 0.1 V). d Photocurrent changes (ΔI_ds) under different light PNs. e Photocurrent changes (ΔI_ds) under different light PWs. f Photocurrent changes (ΔI_ds) under different light PP. g Density functional theory calculated band structure of the ReS₂/GeSe₂ heterojunction. h–l The schematic diagram of the physical mechanism underlying the PPC and NPC performances.