Fig. 1: Influence of strain on excitons in TMDs and experimental technique.
From: Strain fingerprinting of exciton valley character in 2D semiconductors
a Schematic band structure of 1L-WSe2 under zero (grey) and tensile (red) strain. Different valleys respond to strain differently (green arrows). b Calculated energies of various intra- and inter-valley excitons vs. biaxial strain in 1L-WS2 and 1L-WSe2. c Straining technique: an applied gate voltage (VG) induces biaxial strain ε in the center of a suspended TMD monolayer via electrostatic forces. The arrows denote the tensile strain. The inset shows an optical image of a monolayer WSe2 suspended over a circular trench.
