Fig. 3: Interfacial electronic structure of LAO/KTO(110) and LAO/KTO(001).
From: Orientation-dependent electronic structure in interfacial superconductors LaAlO3/KTaO3
a, b In-plane photoemission intensity maps across Γ of LAO/KTO(110) and LAO/KTO(001), respectively. The intensity is integrated over [EF − 150 meV, EF + 150 meV]. c Sketch of the ellipsoid-like Fermi surfaces of the electron-doped KTO and truncating planes of (110) and (001). d Sketch of the electron hopping between neighboring dyz orbitals. e Calculated band dispersions of the electron-doped bulk KTO along M–Γ–X. The spin–orbital coupling in KTO mixes the three t2g orbitals and lifts the J = 1/2 band up by ~0.4 eV. It leaves two J = 3/2 bands crossing the EF to form the double-layer Fermi surfaces, while the extremal parts of the extended lobes retain the nearly single orbital character of the corresponding t2g orbital, as shown for dyz. f–k Photoemission spectra along cuts #4, #5, #6, and #7. The corresponding momentum locations are marked in (a) and (b). MDCs integrated between [EF − 35 meV, EF + 35 meV] are overlaid on the top of each panel. The calculated electron-doped bulk KTO bands are overlaid on the right side after a chemical potential shift to match the experimental kFs and the orbital characters are noted. The insets show the calculated Fermi surfaces and specify the direction of the cuts. Data from s-polarized geometry, which are strongly suppressed owing to matrix element effect69, are amplified by a factor in (h) and (k).
