Fig. 3: Hysteretic reflectance contrast as a function of gate voltage.
From: Excitonic signatures of ferroelectric order in parallel-stacked MoS2
a Integrated amplitude false color map of the numerically calculated first derivative of RC spectra at different gate voltages to visualize domain switching. All measurements were performed at room temperature. Evidently, the out-of-plane electric field drives the blue-colored region to grow in area coverage with increasing gate voltage at the expense of the orange-colored region. b, c False color map of A and B exciton intensity as a function of gate voltage during forward and backward sweep. They share the same y-axis, given on the left. d Two representative room temperature reflectance contrast spectra at opposite gate voltages. Inset- schematic illustration of the field effect device. e Integrated intensity profile ( ≡ vertical line cuts from b) at 1852 ± 2 meV. The vertical arrows represent the ferroelectric ordering of each interface.
