Fig. 1: Current density–voltage (J–V) characteristics of CuPc/PTCBI and CuPc/F16CuPc-based devices.

a Chemical structures of CuPc, PTCBI, and F16CuPc. b Current density–voltage (J–V) characteristics (under forward and reverse bias) of the ITO (100 nm)/CuPc (50 nm)/PTCBI (50 nm)/Al (100 nm) device (red) and the ITO (100 nm)/CuPc (50 nm)/F16CuPc (50 nm)/Al (100 nm) device (blue). c Schematic energy diagram of the ITO/CuPc/PTCBI/Al device (① forward and ② reverse bias) and the ITO/CuPc/F16CuPc/Al device (③forward and ④ reverse bias).