Fig. 5: The optimization of n-type TOPCon structure and performance of complete bottom cells.
From: Highly passivated TOPCon bottom cells for perovskite/silicon tandem solar cells
a The iVOC and J0,s of n-type TOPCon structures with different a-Si deposition times on industrially textured wafers. The insert is the structure sketch of double-sided n-type TOPCon structure on textured wafers. b Illumination intensity-dependent iVOC curves of 320 s n-type TOPCon structures hydrogenated by 15 nm (in black) and 30 nm (in red) AlOx:H. The corresponding passivation parameters are inserted. c The I–V curves for the target p-type (in green) and n-type (in orange) TOPCon structures for the complete bottom cell. The insert is the schematic structure of a complete n-i-p type double-sided TOPCon bottom cell with sub-micrometer-sized pyramids on the front side and industrial micrometer pyramids on the rear side, respectively. d The J–V curves and corresponding data of control and target complete bottom cells.
