Fig. 4: Thermoelectric transport properties.
From: Doping strategy in metavalently bonded materials for advancing thermoelectric performance
a Carrier concentration, (b) carrier mobility of (GeTe)1-2x(GeSe)x(GeS)x, (GeTe)1-2x(SnSe)x(SnS)x, and (GeTe)1-2x(PbSe)x(PbS)x; (c) Electrical conductivity, (d) Seebeck coefficient, (e) lattice thermal conductivity, (f) ZT value of GeTe, (GeTe)0.9(PbSe)0.05(PbS)0.05, (GeTe)0.9(GeSe)0.05(GeS)0.05, and (GeTe)0.9(SnSe)0.05(SnS)0.05. The inset of (f) is ZTzve of GeTe, (GeTe)0.9(PbSe)0.05(PbS)0.05, (GeTe)0.9(GeSe)0.05(GeS)0.05, and (GeTe)0.9(SnSe)0.05(SnS)0.05.
