Fig. 3: Spin diffusion length of BAI-based polymers at room temperature.
From: Halogenated-edge polymeric semiconductor for efficient spin transport
a Schematic diagram of BAI-based polymers spin valve. b A cross-sectional transmission electron microscope image and (c) The corresponding elementary mapping by EDS of the spin valve structure. d Magnetoresistance curves of spin valves with 50 nm-thick BAI-based polymers at room temperature. The bias voltage was fixed at 10 mV to measure the magnetoresistance effect. Note that all the MR tests in this article are measured by a sweeping magnetic field from negative to positive (corresponding to the right peak of curves) to negative (corresponding to the left peak of curves). e Thickness-dependent MR of spin valves based on PBAI-V, P2ClBAI-V, and PFClBAI-V, respectively. The solid lines are the fitted curves according to formula (4). Error bars indicate the data are collected from five devices on the same chip at each thickness. f Comparison of the spin diffusion length of PBAI-V, P2ClBAI-V, and PFClBAI-V, green pattern bar chart represents λs calculated by formula (1) and blue bar chart represents λs fitted by formula (4). g Comparison of MR and λs of BAI-based polymers with other organic materials at room temperature reported in the literature. The same color used for both the icon and font represents the corresponding molecular semiconductor material. Details of data points are presented in Supplementary Table 2.
