Fig. 2: Photoresponse obtained in symmetry-breaking 2H-MoTe2.
a Schematic description of the device structure. The P(VDF-TrFE) above channel is polarized into T-shape arrayed ferroelectric domains by applying bias through the PFM tip. θ is the polarization angle of the incident light. b The output characteristics (Isd-Vsd) of the device in Fig. 2c in the dark and under the illumination of 940 nm laser. c The spatial photocurrent mapping at 0 V under the illumination of 520 nm. The top panels show the optical image of the device (left) and patterned ferroelectric domains via PFM lithography mode (right). The yellow and red dashed boxes show the ferroelectric domains region and photocurrent region, respectively. The white T-shape dashed box in the photocurrent mapping corresponds to one T-shape ferroelectric domain in the PFM phase. The scale bar is 5 μm. d The linear polarization dependence of the photocurrent of pristine 2H-MoTe2 (top) and 2H-MoTe2 tuned by arrayed T-shaped ferroelectric domains (bottom). The excitation laser wavelength was 940 nm. The laser power is about 5 μW.
