Fig. 3: Photoresponse characterization of reconfigurable MAPbI3/Bi2O2Se heterotransistors.
a Transfer curves and b net photocurrents of MAPbI3/Bi2O2Se heterotransistor under 532 nm illumination with varied light intensities. c Light-intensity dependence of the photoresponsivity R and the specific detectivity D* under 532 nm illumination at the gate voltage of 0 V. d Pseudo-color plot of the photoresponsivity under 532 nm illumination with varied light intensities, in which the gate voltage was tuned from −6 to 6 V. e Dependence of bipolar photoresponsivity on the gate voltage in the visible illumination range of 400–800 nm. f Benchmark of the photoresponsivity in various unipolar and bipolar photosensors. g Linear dependence of the bipolar photoresponsivity on the gate voltage under 532 nm illumination. h Dependence of the net photocurrent on the light intensity under 532 nm illumination with the gate voltage varying from −3 to 3 V. i Photocurrent curves measured under the on/off recycles for negative photoresponses. j–l Illustration of band alignment and interlayer carrier transfer of the MAPbI3/Bi2O2Se heterotransistor under the gate voltage of 0 V, −3 V, and 3 V, respectively.
