Fig. 5: Electric-field induced GB formation of 1T’–MoTe2.
From: Hierarchical zero- and one-dimensional topological states in symmetry-controllable grain boundary
a, b Side view of schematic illustrations of the GB formation processes by creating a hole on the surface, contacting the hole edge with an STM tip, and applying a voltage pulse. c Current trace as a function of tip-approaching distance. d, f Derivative STM images obtained after a hole creation. e, g Derivative STM images taken after the GB formation process performed at the position marked with the red cross in (d), and (f) via the method illustrated in (a) and (b), respectively. h Derivative STM images taken after the grain-switching process performed at the position marked with the red cross in (g). i DFT-calculated changes in the cell parameters vs. external electric field along the a and b axes, where ao and bo are the optimized lattice constants calculated without any constraints.
