Fig. 2: Room temperature electrical characterization of the VSFET.
From: High drain field impact ionization transistors as ideal switches
a Transfer characteristics of the n-type VSFET with back-gate voltages from 0 V to -20 V with a step of –5 V. b Transfer characteristics of the n-type VSFET with bias voltages from 1.5 V to 3 V. The inset is the transfer characteristic curves at VDS = 0.4 V. c SS versus output current IDS of 30 representative n-type VSFETs showing reproducibility of the effect at VDS = 3 V. The inset is the statistical distribution of SS for these n-type VSFETs (the voltage scanning step is 50 mV). d Transfer characteristics of the n-type VSFET measured with voltage scanning step of 0.1 mV. The bias voltage of VDS is 3 V and the temperature is 300 K. e Transfer characteristics of the p-type VSFET with back-gate voltages from 0 V to 20 V. f Transfer characteristics of the p-type VSFET with drain bias voltages from –2 V to −3 V.
