Fig. 4: Complementary inverter fabricated with VSFET as n-type FET and conventional MOSFET as p-type FET.
From: High drain field impact ionization transistors as ideal switches
a Three-dimensional schematic, and circuit configuration of the inverter. b Transfer characteristics of n-type VSFET and p-type MOSFET (blue and pink curves, respectively). c The voltage transfer characteristics and gains of the inverter under VDD = 1.5 and 2.0 V. d Benchmark of inverter gain as a function of VDD for inverters based on steep switching devices26,27,28,29,30, 2D semiconductor-based CFETs31,32,33,34,35, silicon-based CFETs36,37,38 and VSFET in this work.
