Fig. 1: Mechanisms for SDE/JDE.

a JDE in the asymmetric SQUID formed by two asymmetric JJs. b An asymmetric SQUID formed by asymmetric edge states in Ta₂Pd₃Te₅ JJ and its device configuration. The upper and lower edges are the palladium and tantalum-tellurium atomic chain, respectively. The inset shows the photomicrograph of device S2, and the white scale bar corresponds to 1 μm. c–f Simulated CPR based on the minimal model. JDE only exists in (d) with different supercurrents, a nonzero magnetic field (ϕ/ϕ₀ ≠ 0), and higher harmonics in the CPR (α_n ≠ 0). The red and pink arrows represent the maximum(I_c+) and minimum(I_c−) current in the CPR, respectively. g Band structure of monolayer Ta₂Pd₃Te₅. Edge states (blue and red lines) exist near the Fermi level and are marked in the corresponding edges of (b). h \(\left\vert {I}_{b}\right\vert -\left\vert V\right\vert\) curves for positive and negative current sweep at B_z = 8.4 mT. i, j Alternating switching between the superconducting and normal states at B_z = 8.4 mT and 10 mK in device S2.