Fig. 2: Asymmetric Josephson effect and JDE in Ta₂Pd₃Te₅ JJs.

a SQUID pattern of device S1 at 15 mK. b Position-dependent supercurrent density distribution. Inset: A sketch of edge supercurrents-formed JJ. c B_z-dependent I_c+ and \(\left\vert {I}_{c-}\right\vert\). The switching current I_c+ and I_c− are extracted by  ~15% of normal resistance. d Non-reciprocal critical current \(\Delta {I}_{c}={I}_{c+}-\left\vert {I}_{c-}\right\vert\), Josephson diode efficiency η and fitted ΔI_c (black line) as a function of B_z. e Temperature-dependent I_c+, I_c−, ΔI_c and η for device S1 at B_z = 6.4 mT. The error bars primarily stem from the definition of the switching current, which is determined by 15% ± 5% drop of the normal resistance. f SQUID pattern of device S2 at 10 mK. g Supercurrent density distribution. The inset is a draft of the JJ with three-edge supercurrents. h B_z dependence of I_c+ and \(\left\vert {I}_{c-}\right\vert\). i Oscillating ΔI_c, η and fitted ΔI_c (black line). j Temperature-dependent I_c+, I_c−, ΔI_c and η for device S2 at B_z = 8.4 mT. The error bars are obtained by the same method as in (e).