Fig. 3: Fractional Shapiro steps under microwave in both Ta2Pd3Te5 devices.
From: Interfering Josephson diode effect in Ta2Pd3Te5 asymmetric edge interferometer
a Differential resistance (dV/dI) as a function of voltage characteristics and flux quantum at microwave power = −32 dBm, f = 5 GHz, and 30 mK for device S1. The  ±1/2th Shapiro steps are marked by black arrows. b dV/dI versus Ib at Bz = 5.5 mT (3/2 ϕ0). Valleys characterized by half-integer steps are observed clearly. c Flux quantum and voltage dependence of dV/dI at microwave power = 10 dBm, f = 4.64 GHz, and 10 mK for device S2. d Valleys characterized by the  −1/2th Shapiro step at 6.7 mT (3/2 ϕ0). e Microwave power dependence of dV/dI at 4.64 GHz and Bz = 6.7 mT in device S2. The  −1/2th Shapiro step is marked by black arrows. f Microwave power-dependent non-reciprocal critical current of the 0th Shapiro steps, which is extracted from (e). The switching currents here can be determined by peaks in the dV/dI - Ib curve, as shown in Supplementary Fig. 8c, and the error bars primarily originate from the broadening of these peaks.
