Fig. 4: Flexoelectricity-tuned MoS2 transistors with PTO bottom-gate dielectrics.
From: Ultralow-pressure-driven polarization switching in ferroelectric membranes
a Schematic of a bottom-gate MoS2 FET. The charge state of MoS2 channel is controlled by mechanical switching polarization of underlying PTO membranes across top encapsulating hBN and MoS2 layer. b Optical images of the device. The boundaries of MoS2 and hBN are outlined by dashed lines. Scale bar, 5 μm. c Topography, vertical-PFM amplitude and phase images after mechanical polarization switching in hBN/MoS2/PTO. Scale bar, 600 nm. d Output characteristics of the device obtained when the PTO membrane at Pup or Pdown states, respectively (VGS = 0 V).
