Fig. 1: Sketch of a three-terminal magnon field effect transistor (Magnon FET).
From: A nonvolatile magnon field effect transistor at room temperature
Three heavy-metallic (HM) stripes are placed onto a ferromagnetic or ferrimagnetic insulator (FI) /ferroelectric (FE) bilayer. The left stripe acts as the magnon source (S), while the transmission of magnons to the detector (D) stripe placed on the right side can be modulated by the voltage pulses \({V}_{{{\rm{g}}}}\) applied at the gate (G) stripe, which is located in the middle. Meanwhile, spin accumulation is generated at the HM/FI interface of the injector stripe via the spin Hall effect or thermal excitation, and the spin accumulation is converted into a charge current at the detector stripe through the inverse spin Hall effect. Additionally, a bottom electrode is positioned beneath the FE layer and is aligned with the G-stripe. The magnetic field \({\mu }_{0}H\) is applied in the film plane. In our experiments, the materials of HM, FI, and FE are selected as Pt, Y3Fe5O12, and Pb(Mg1/3Nb2/3)0.7Ti0.3O3 or Pb(Zr0.52Ti0.48)O3, respectively.
