Fig. 3: Performance of a magnon FET device.
From: A nonvolatile magnon field effect transistor at room temperature
a SEM image of a typical three-terminal magnon FET device. \({{V}}_{{{\rm{g}}}}\) is applied across the G-stripe and the bottom electrode (BE). b Non-local voltage \({{V}}_{{{\rm{nl}}}}^{{{\rm{DC}}}}\) amplitude (red) as a function of the gate voltage pulse \({{V}}_{{{\rm{g}}}}\) for device 1 with a width of ~585 nm for the gate stripe, exhibiting a typical hysteresis in close similarity with the charge loop (blue) obtained on the same sample. Error bars are obtained from repeated measurements for each \({{V}}_{{{\rm{g}}}}\). c Magnetic field-dependent \({{V}}_{{{\rm{nl}}}}^{{{\rm{DC}}}}\) after applying different voltage pulses \({{V}}_{{{\rm{g}}}}\). For clarity, the loops are shifted vertically. All non-local measurements are conducted after the electric voltage is removed, namely, in a nonvolatile manner. d Electric field induced nonvolatile switching of \({{V}}_{{{\rm{nl}}}}^{{{\rm{DC}}}}\) amplitude at the remnant states after applying the pulses of \({{V}}_{{{\rm{g}}}}= \pm 200\,{{\rm{V}}}\). e The averaged magnetic field-dependent \({{V}}_{{{\rm{nl}}}}^{{{\rm{DC}}}}\) for \({{V}}_{{{\rm{g}}}}= \pm 200\,{{\rm{V}}}\), showing a high on/off ratio of ~400%. In b–e, the symbols are the experimental data, and the lines are guides to the eye.
