Fig. 2: Incident polarization dependence of shift current.
From: Strongly enhanced shift current at exciton resonances in a noncentrosymmetric wide-gap semiconductor
a, b Incident polarization dependence of zero-bias DC photocurrent in the x (red) and y (blue) directions at 50 K excited by CW lasers operating at 3.3 eV (a) and 3.05 eV (b). The solid lines are the results of fitting with \({J}_{x}\propto \cos 2\theta\) and \({J}_{y}\propto -\sin 2\theta\). c Incident polarization dependence of the intensity of second harmonic generation (SHG) polarized in the x and y directions at 300 K. The solid lines are the results of fitting with \({I}_{x}^{\text{SHG}}\propto {\cos }^{2}2\theta\) and \({I}_{y}^{\text{SHG}}\propto {\sin }^{2}2\theta\).
