Fig. 3: Working principle and universality of LI-assisted ionic migration transport.
a Schematic illustration of ion injection and interaction with molecular stacking structures, and the corresponding equivalent circuit model for striped OSC films. The CCh, RE and RCh represents channel capacitance, electrolyte resistance and channel resistance, respectively. b Comparison of total resistance including RE and RCh. c ToF‐SIMS depth profiles showing the concentration of TFSI− anion and normalized Au− across the doped P3HT films. d In-situ monitoring of electrochemical UV-Vis absorption under a 1.2 V bias for P3HT films without and with stripe patterns. The absorptions are normalized in arbitrary units (arb. unites). e τ value of OECT devices fabricated with striped PBTTT, P3HT and p(g2T-TT) films with the stripe width of 100 μm (grey column) and 2 μm (red column). All the semiconductor layers were controlled with the film thickness of 400 nm. Error bars represent standard deviations from the mean (n = 5). f Comparison of τ100/τ2 (red point), Lc (blue column) and g factor (green column) obtained from PBTTT, P3HT and p(g2T-TT) films and corresponding OECT devices.
