Fig. 3: Characterizations of absorber layers by SEM and ToF-SIMS. | Nature Communications

Fig. 3: Characterizations of absorber layers by SEM and ToF-SIMS.

From: Highly efficient narrow bandgap Cu(In,Ga)Se2 solar cells with enhanced open circuit voltage for tandem application

Fig. 3

a Cross-sectional SEM images of Sample A, B1, B2 and C prepared by different profiles. b Depth profiles of GGI calculated from ToF-SIMS data for the narrow bandgap CIGSe absorbers for Sample A, B1, B2 and C. The dashed lines are the eye-guided slopes of the back Ga grading. c–e ToF-SIMS element mapping of Ga for Sample A, B1 and C. f–h ToF-SIMS element mapping of In for Sample A, B1 and C. The depth direction is along the vertical axis.

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