Fig. 4: Simulation of exciton transport and routing.

a Simulated exciton distribution normalized by exciton density at pumping position (valley). The dotted line presents exponential fitting of exciton density at half of wavelengths (apex). b Simulation of funneled exciton density n_b at apex relative to exciton density at excited valley as functions of distance (half of wrinkle wavelength) and applied strain ε. c Modulation of d_1/e (funneling distance at which density of funneled exciton at apex becomes 1/e of exciton density at excited valley) and characteristic decay length (absolute value of inverse slope of logarithmic plot of funneled exciton density at apex normalized by exciton density at excited valley). The dotted line indicates our experimental strain value (2.4%). d Schematic illustration of biaxially strained WSe₂ on elastomeric substrate. Stretching in x- or y- direction causes removal of local strain in the same direction. e Exciton energy distribution of biaxially strained WSe₂ device. The coordinate (0,0) and (1,1) indicate the valley under compressive strain and the peak under tensile strain, respectively, while (1,0) and (0,1) become local energy minima under reconfigurable stretching in y- or x-direction, respectively. f Simulated exciton density map of excited exciton (t = 0 ns) (bottom left) and drifted excitons under different local strain at t = 1.5 ns. Stretching in x- (y-) direction causes annihilation of x- (y-) local strain component, resulting in y-direction exciton drift (top left) or x-direction drift (bottom right), respectively. Biaxial local strain (no stretching) leads to exciton drift to (1,1) direction (top right). Scale bar is 1 μm.