Fig. 3: Spectroscopic and temperature-dependent studies on carrier-phonon coupling in CuSbSe2.
From: Structural and electronic features enabling delocalized charge-carriers in CuSbSe2
a Normalized comparison between the fluence-dependent optical pump terahertz probe (OPTP) transients measured for CuSbSe2 thin films following 400 nm wavelength pulsed excitation. b Temperature-dependent mobility of CuSbSe2 thin films determined using Hall effect measurements, fit using a power law model that indicates \(\mu \propto {T}^{-1.2}\). The point at the lowest temperature (121 K) is not included in the fit due to its higher standard deviation than the other data points. The error bars represent the standard deviation between two samples, which were prepared and measured with identical parameters.
