Table 1 Analysis of n-type-to-p-type transition (Se values are negative, and Sp values are positive. ‘↑’ indicates an increasing trend, while ‘↓’ indicates a decreasing trend)
From: Cu- or Ag-containing Bi-Sb-Te for in-line roll-to-roll patterned thin-film thermoelectrics
S behavior | Majority carrier | Dominant phenomena | Results | ||
|---|---|---|---|---|---|
n-type | |S| ↑ | Electron | The decrease in Te content; The heterostructure interface | Electron concentration ↓ | Negative S. | Se | ↑ so |S | ↑ |
|S| ↓ | The interstitial doping | Electron concentration ↑ | Negative S. | Se | ↓ so |S | ↓ | ||
p-type | Transition appears | Hole | The substitutional doping; Formation of other phases | Hole concentration dominates | Positive S. |Sp | > |Se | |
|S| ↓ | Hole concentration ↑ | Positive S. | Sp | ↓ so |S | ↓ | |||
