Table 2 Fabrication details of TEGs (Sp. denotes sputtering and Evap. denotes evaporation)

From: Cu- or Ag-containing Bi-Sb-Te for in-line roll-to-roll patterned thin-film thermoelectrics

Device

Thermoelectric patterns

Metal contact

RTEG (kΩ)

R2R compatible?

TEG 1

Shadow Mask Sp. of Bi-Sb-Te + Evap. of Cu

Shadow Mask Evap. of Cu

4 ( ± 0.1)

TEG 2

SMT Sp. of Bi-Sb-Te + Evap. of Cu, then 1 h e-beam cleaning (in situ)

Shadow Mask Evap. of Cu

691 ( ± 1)

TEG 3

Same to TEG 2 (1 h e-beam)

Ag printing

2193 ( ± 22)

TEG 4

SMT Sp. of Bi-Sb-Te + Evap. of Cu, then a few seconds of plasma (ex situ)

Ag printing

1846 ( ± 3)

  1. RTEG is the internal resistance of the thermoelectric generator device. Shadow masks and 1 h e-beam processes are not compatible with R2R manufacturing, while SMT, a few seconds of plasma exposure and Ag printing are compatible with R2R.
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