Fig. 2: Optical and electrical properties of Au NP-based recombination interconnect.

A Optical characteristic (total transmittance and reflectance) of glass/MoOx or PEDOT:F/Au/ZnO/PFN-Br with an inset of their photograph (left: MoOx, right: PEDOT:F). B Parasitic absorptance of ICLs (glass/MoOx or PEDOT:F/with or without Au/ZnO/PFN-Br). C Estimated haze transmittance of ICLs (glass/MoOx or PEDOT:F/with or without Au/ZnO/PFN-Br). D Total transmittance spectra of half-stacked-tandems integrating front perovskite cell with ICLs. E, F The total transmittance spectra of ICLs (glass/MoOx or PEDOT:F/with or without Au/ZnO/PFN-Br) with different deposition rates of Au recombination sites. G J-V characteristics of ICLs-only devices with structure of ITO/D18-Cl/MoOx or PEDOT:F/Au/ZnO/PFN-Br/Ag (dashed line), ITO/PEDOT:PSS/D18-Cl/MoOx or PEDOT:F/Au/ZnO/PFN-Br/Ag (open-circle curve), and ITO/MoOx or PEDOT:F/Au/ZnO/PFN-Br/Ag (solid-sphere curve). The thicknesses of MoOx and PEDOT:F are 8 nm and 15 nm, respectively. First quadrant: hole injection from ITO. H, I J-V characteristics of ICLs-only devices (ITO/MoOx or PEDOT:F/Au/ZnO/PFN-Br/Ag) with various thicknesses of MoOx and PEDOT:F.