Fig. 2: Band structure modulation of bilayer graphene on twisted bilayer BN moiré polar substrate.
From: Moiré band structure engineering using a twisted boron nitride substrate
a Longitudinal resistivity ρxx as a function of carrier density n in devices A1-A5, measured at 4.2 K. Satellite resistance peaks symmetrically located around CNP are observed at different carrier densities that correspond to different moiré wavelengths. Arrows indicate the positions of the satellite resistance peaks. b Hall resistivity ρyx as a function of n in devices A1-A5 at B = 0.2 T, T = 4.2 K. c Piezoresponse force microscopy (PFM) image of twisted BN before making into device A2. Scale bar: 50 nm. Inset: Fourier transform image. Scale bar: 0.3 nm-1. d Longitudinal conductance σxx as a function of filling factor n/n0 and magnetic field B (right y axis: normalized magnetic flux ϕ/ϕ0), measured at 0.3 K in device A3. ϕ = BA, the magnetic flux per moiré unit cell, and flux quantum ϕ0 = h/e. e Transverse conductance σxy as a function of n/n0 and B (right y axis: ϕ/ϕ0), measured at 0.3 K in device A3.
