Fig. 3: Devices with inserted BN above near-0°-twisted bilayer BN.
From: Moiré band structure engineering using a twisted boron nitride substrate
a Schematic of devices with inserted BN between twisted bilayer BN and bilayer graphene. b ρxx as a function of n in devices B1-B7 measured at 4.2 K. c ρyx as a function of n in devices B1-B7 at 4.2 K, B = 0.2 T.
