Fig. 4: Tuning moiré polar potential by changing dielectric thickness.
From: Moiré band structure engineering using a twisted boron nitride substrate
a Electrostatic simulation of the moiré potential peak magnitude Upeak as a function of total bottom BN thickness d. Inset: Device schematic. A thick BN layer is inserted between the twisted bilayer BN and the bottom graphite. b ρxx as a function of n in devices A3 (without bottom thick BN) and C1 (with bottom thick BN), measured at 4.2 K. Insets: Device schematics (left) and large-scale plots (right). c σxx as a function of n/n0 and B (right y axis: ϕ/ϕ0), measured at 0.3 K in device C1. d σxy as a function of n/n0 and B (right y axis: ϕ/ϕ0), measured at 0.3 K in device C1.
