Fig. 3: Magnetic field dependence of \({\sigma }_{{{\rm{xx}}}}(\overline{D}/{\varepsilon }_{int})\) for νtot = −1/3 in device D2.
From: Observation of 1/3 fractional quantum Hall physics in balanced large angle twisted bilayer graphene
a σxx as a function of \(\overline{D}/{\varepsilon }_{int}\) for different magnetic field values. \(\overline{D}/{\varepsilon }_{int}=0\) is highlighted with an orange line. Here, the (333) state develops. Curves are vertically offset for clarity. b Hall conductivity σxy as a function of νtot. Red lines emphasize the plateau for νtot = −1/3. The right most part of the curve is shown as a dotted line. The plateau is an artifact from the saturation of the lock-in amplifier as charge neutrality is approached and the Hall resistance rises rapidly. All data were acquired at approximately 30 mK.
